Jonathan C Dahm

Title: Innovations of Jonathan C Dahm

Introduction

Jonathan C Dahm is a notable inventor based in Austin, TX, who has made significant contributions to the field of semiconductor technology. With a total of six patents to his name, Dahm has focused on developing innovative solutions that enhance the efficiency and effectiveness of electronic devices.

Latest Patents

One of his latest patents is a dry etch method using non-halocarbon source gases. This method allows for the dry etching of silicon layers without the use of traditional halocarbon gases, which are known to be greenhouse gases. Instead, it utilizes a fluorine source, such as HF or F₂ gases, along with a carbon-oxygen source like CO or CO₂ to stabilize polymer build-up in the reactor. Another significant patent is for a single metal-plate bypass capacitor. This capacitor design features a metal top plate separated from a silicon substrate by a thermally-grown silicon dioxide dielectric layer. The design minimizes self-inductance and allows for direct attachment to semiconductor devices, enhancing performance.

Career Highlights

Dahm is currently employed at Motorola Corporation, where he continues to innovate and contribute to advancements in semiconductor technology. His work has been instrumental in developing new methods and devices that improve electronic performance.

Collaborations

Throughout his career, Dahm has collaborated with notable colleagues, including John G Franka and Israel A Lesk. These collaborations have fostered an environment of innovation and have led to the development of groundbreaking technologies.

Conclusion

Jonathan C Dahm's contributions to the field of semiconductor technology through his patents and work at Motorola Corporation highlight his role as a significant inventor. His innovative approaches continue to shape the future of electronic devices.