The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 06, 1983

Filed:

May. 17, 1982
Applicant:
Inventors:

Richard H Hogan, Austin, TX (US);

Jonathan C Dahm, Austin, TX (US);

Assignee:

Motorola, Inc., Schaumburg, IL (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
427 94 ; 118715 ; 134 37 ; 427 95 ;
Abstract

In a process for depositing nitride on semiconductor wafers in a tube, streaks can develop on the wafers. The streaks are eliminted by flowing oxygen through the tube between nitride depositions of different groups of wafers.


Find Patent Forward Citations

Hogan, Richard. (1983). Process for improving nitride deposition on a semiconductor wafer by (U.S. Patent No. 4402997). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4402997

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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