Austin, TX, United States of America

Richard H Hogan

This inventor holds 1 USPTO granted patent. Top assignee: Motorola Corporation. Active years: 1983.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Richard H Hogan. Retrieved from https://idiyas.com/inventor/richard-h-hogan

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 26(Granted Patents)


Company Filing History:


Years Active: 1983

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1 patent (USPTO):Explore Patents

Title: The Innovations of Richard H Hogan

Introduction

Richard H Hogan is a notable inventor based in Austin, TX. He has made significant contributions to the field of semiconductor technology. His work primarily focuses on improving processes related to nitride deposition on semiconductor wafers.

Latest Patents

Richard H Hogan holds a patent for a process aimed at enhancing nitride deposition on semiconductor wafers. The patent addresses the issue of streaks that can develop on the wafers during the deposition process. By flowing oxygen through the tube between nitride depositions of different groups of wafers, these streaks can be effectively eliminated. This innovation is crucial for ensuring the quality and reliability of semiconductor devices.

Career Highlights

Hogan is associated with Motorola Corporation, a leading company in the telecommunications and semiconductor industry. His work at Motorola has allowed him to contribute to advancements in technology that impact various electronic devices.

Collaborations

One of his notable coworkers is Jonathan C Dahm. Together, they have worked on projects that enhance the efficiency and effectiveness of semiconductor manufacturing processes.

Conclusion

Richard H Hogan's contributions to semiconductor technology through his innovative patent demonstrate his commitment to improving manufacturing processes. His work continues to influence the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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