The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 1993
Filed:
Dec. 09, 1991
Applicant:
Inventors:
Assignee:
Motorola, Inc., Schaumburg, IL (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
20419232 ; 20429834 ; 156345 ; 156643 ; 156644 ; 156646 ; 156651 ; 156657 ; 1566591 ;
Abstract
A multi-tiered contact etch process comprising alternating anisotropic and isotropic etch steps is performed in a reactive ion etcher wherein DC bias on a cathode (11) of the etcher can be controlled independently from RF power, adding a great deal of control over isotropy of the etching. By shunting the cathode (11) directly to ground a high level of isotropy is achieved during isotropic etch steps. When the cathode (11) is not shunted to ground a bias voltage develops on the cathode (11) providing a highly anisotropic etching.