The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 1994
Filed:
Jan. 10, 1994
Aubrey K Sparkman, Austin, TX (US);
Kevin A Calhoun, Austin, TX (US);
Jonathan C Dahm, Austin, TX (US);
Joseph M Haas, Jr, Austin, TX (US);
Rolando J Osorio, Manchacha, TX (US);
Motorola Inc., Schaumburg, IL (US);
Abstract
A single metal-plate bypass capacitor (10) includes a metal top plate (26) separated from a silicon substrate (12) by a thermally-grown, silicon dioxide dielectric (16) layer. An additional silicon plate (36) can be included intermediate to the metal top plate (26) and the silicon substrate (12) for multiple power supply devices. The silicon substrate (12) is electrically accessed through a metal contact pad (28) overlying a doped region (34) of the silicon substrate (12). The metal contact pad (28) is electrically isolated from the top plate (26) by an isolation structure (30). The bypass capacitor (10) is designed to be attached directly to the top surface of a semiconductor device (18), which enables the bypass capacitor (10) to be interconnected to the semiconductor device (18) by a plurality of bonding wires (25) having a minimal length. Because the capacitor dielectric (16) is formed as a very thin layer by the thermal oxidation of silicon, the self-inductance of bypass capacitor (10) is minimized.