Austin, TX, United States of America

Joseph M Haas

This inventor holds 2 USPTO granted patents. Top assignees: Freescale Semiconductor,inc., Motorola Corporation. Active years: 1994-2004.


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 2

Forward Citations = 104(Granted Patents)


Company Filing History:


Years Active: 1994-2004

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2 patents (USPTO):Explore Patents

Title: Joseph M Haas: Innovator in Semiconductor Technology

Introduction

Joseph M Haas is a notable inventor based in Austin, TX, with a focus on semiconductor technology. He holds 2 patents that showcase his contributions to the field. His work has significantly impacted the design and functionality of semiconductor packages and bypass capacitors.

Latest Patents

One of Haas's latest patents is for a semiconductor package with multiple sides having package contacts. This innovative assembly allows for connections between different packages and substrates, enhancing the electrical contact to semiconductor dies. Another significant patent is for a single metal-plate bypass capacitor, which features a metal top plate separated from a silicon substrate by a silicon dioxide dielectric layer. This design minimizes self-inductance and allows for efficient interconnection to semiconductor devices.

Career Highlights

Throughout his career, Joseph M Haas has worked with prominent companies such as Freescale Semiconductor, Inc. and Motorola Corporation. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.

Collaborations

Haas has collaborated with notable colleagues, including Addi B Mistry and Kevin A Calhoun. These partnerships have likely fostered a creative environment that has led to significant advancements in their respective fields.

Conclusion

Joseph M Haas is a distinguished inventor whose work in semiconductor technology has led to valuable patents and innovations. His contributions continue to influence the industry and inspire future advancements.

Profile summary based on public USPTO records.
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