Motorola Corporation

Freescale Semiconductor,inc.

Joseph M Haas

Addi B Mistry

Aubrey K Sparkman

Jonathan C Dahm

James H Kleffner

Rolando J Osorio

Daryl R Wilde

Dennis O Kiffe

Kevin A Calhoun

A semiconductor package assembly has an intervening package ( ) that may be connected to a first package ( ) from a first substrate ( ) on a first side of the package ( ) and to a second package ( ) from a second substrate ( ) on a second, opposing side of the package ( ). Electrical contact to a semiconductor die ( ) is made from the first side by wire bonding to wire bond posts ( ) and by balls ( ) from the second side. Electrical contact from one side of the intervening package ( ) to the other may be made by bypassing the die. Electrical contact on either side of the intervening package may be made both within and outside the footprint of the semiconductor die ( ).

Semiconductor package with multiple sides having package contacts

A single metal-plate bypass capacitor (10) includes a metal top plate (26) separated from a silicon substrate (12) by a thermally-grown, silicon dioxide dielectric (16) layer. An additional silicon plate (36) can be included intermediate to the metal top plate (26) and the silicon substrate (12) for multiple power supply devices. The silicon substrate (12) is electrically accessed through a metal contact pad (28) overlying a doped region (34) of the silicon substrate (12). The metal contact pad (28) is electrically isolated from the top plate (26) by an isolation structure (30). The bypass capacitor (10) is designed to be attached directly to the top surface of a semiconductor device (18), which enables the bypass capacitor (10) to be interconnected to the semiconductor device (18) by a plurality of bonding wires (25) having a minimal length. Because the capacitor dielectric (16) is formed as a very thin layer by the thermal oxidation of silicon, the self-inductance of bypass capacitor (10) is minimized.

Single metal-plate bypass capacitor

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Austin, TX, United States of America

Joseph M Haas