The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 05, 1994

Filed:

Sep. 03, 1992
Applicant:
Inventors:

Israel A Lesk, Phoenix, AZ (US);

Young Limb, Austin, TX (US);

Philip J Tobin, Austin, TX (US);

John Franka, Austin, TX (US);

Paul T Lin, Austin, TX (US);

Jonathan C Dahm, Austin, TX (US);

Gary L Huffman, Austin, TX (US);

Bich-Yen Nguyen, Austin, TX (US);

Assignee:

Motorola, Inc., Schaumburg, IL (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B44C / ; H01L / ;
U.S. Cl.
CPC ...
156628 ; 156646 ; 437 13 ;
Abstract

Contaminants are removed from a semiconductor material by heating the semiconductor material to temperature within the range of a minimum temperature where a halogen compound will decompose to halogen atoms without the use of ultraviolet irradiation and react with contaminants present on the semiconductor material and a maximum temperature of 800.degree. C., wherein less than or equal to approximately 50 Angstroms of oxide is formed on the semiconductor material. The ambient in which the semiconductor material is heated is an ambient comprised of a nonreactive gas and a halogen compound for at least a time sufficient to remove a substantial amount of contaminants from the semiconductor material.


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