Austin, TX, United States of America

Gary L Huffman


Average Co-Inventor Count = 3.2

ph-index = 2

Forward Citations = 34(Granted Patents)


Company Filing History:


Years Active: 1994-2008

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2 patents (USPTO):Explore Patents

Title: The Innovations of Gary L. Huffman

Introduction

Gary L. Huffman is a notable inventor based in Austin, Texas, recognized for his contributions to semiconductor technology. With a total of two patents to his name, Huffman's work has significantly impacted the field of electronics.

Latest Patents

Huffman’s latest patents include a MIM capacitor in a semiconductor device and a method for removing contaminants from semiconductor materials. The MIM capacitor patent describes a capacitor formed over metal interconnect layers, featuring a lower and upper plate electrode with an insulator in between. This design enhances reliability by reducing defects through a chemical mechanical polish process. His second patent focuses on a method for removing contaminants from semiconductor materials by heating them in a specific ambient, allowing for effective cleaning without excessive oxide formation.

Career Highlights

Throughout his career, Huffman has worked with prominent companies such as Motorola Corporation and Freescale Semiconductor. His experience in these organizations has allowed him to develop and refine his innovative ideas in semiconductor technology.

Collaborations

Huffman has collaborated with notable colleagues, including Israel A. Lesk and Young Limb, contributing to advancements in their respective fields.

Conclusion

Gary L. Huffman’s work in semiconductor technology showcases his innovative spirit and dedication to improving electronic devices. His patents reflect a commitment to enhancing the reliability and efficiency of semiconductor materials.

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