IDiyas

For the Inventor, By the Inventor

Suwon-si, South Korea

Jo-won Lee

USPTO Granted Patents = 22

Average Co-Inventor Count = 3.6

ph-index = 11

Forward Citations = 422(Granted Patents)


Location History:

  • Kyungki-do, KR (2001)
  • Suwon, KR (1998 - 2006)
  • Suwon-si, KR (2005 - 2012)

Company Filing History:

goldMedal22 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 1998-2012

Loading Chart...
22 patents (USPTO):
1. 8237214 - Non-volatile memory device including metal-insulator transition material (2012-08-07),
2. 8139387 - Method of erasing a memory device including complementary nonvolatile memory devices (2012-03-20),
3. 7759196 - Multi-bit non-volatile memory device, method of operating the same, and method of fabricating the same (2010-07-20),
4. 7719871 - Methods of operating and manufacturing logic device and semiconductor device including complementary nonvolatile memory device, and reading circuit for the same (2010-05-18),
5. 7374991 - SONOS memory device having side gate stacks and method of manufacturing the same (2008-05-20),
6. 7345898 - Complementary nonvolatile memory device (2008-03-18),
7. 7202521 - Silicon-oxide-nitride-oxide-silicon (SONOS) memory device and methods of manufacturing and operating the same (2007-04-10),
8. 7187030 - SONOS memory device (2007-03-06),
9. 7020064 - Rewritable data storage using carbonaceous material and writing/reading method thereof (2006-03-28),
10. 6946703 - SONOS memory device having side gate stacks and method of manufacturing the same (2005-09-20),
11. 6930343 - Nonvolatile memory device utilizing a vertical nanotube (2005-08-16),
12. 6855603 - Vertical nano-size transistor using carbon nanotubes and manufacturing method thereof (2005-02-15),
13. 6833567 - Vertical nano-size transistor using carbon nanotubes and manufacturing method thereof (2004-12-21),
14. 6815294 - Vertical nano-size transistor using carbon nanotubes and manufacturing method thereof (2004-11-09),
15. 6597036 - Multi-value single electron memory using double-quantum dot and driving method thereof (2003-07-22),

Title: Innovations and Contributions of Jo-won Lee in Non-Volatile Memory Technology

Introduction: Jo-won Lee, a prominent inventor based in Suwon-si, South Korea, is recognized for his significant contributions to the field of non-volatile memory technology. With a remarkable portfolio of 22 patents, Lee has established himself as a key innovator at Samsung Electronics Co., Ltd.

Latest Patents: One of Jo-won Lee's latest inventions includes a non-volatile memory device integrating a metal-insulator transition (MIT) material. This inventive device consists of a gate stack with a tunneling layer, a charge trap layer, a blocking layer, and a gate electrode all formed on a substrate, showcasing advanced features that utilize MIT materials for improved performance. Additionally, he has developed methods for erasing a memory device that encompasses complementary nonvolatile memory devices. This innovation presents a cohesive design, combining a first and second nonvolatile memory with a complementary relationship, enhancing the efficiency of memory operations.

Career Highlights: Throughout his career at Samsung Electronics Co., Ltd., Jo-won Lee has played an essential role in advancing memory technology. His innovative spirit and technical expertise have led to the development of cutting-edge memory solutions that are pivotal to the electronics industry.

Collaborations: Jo-won Lee collaborates closely with talented individuals like Chung-woo Kim and Moon-kyung Kim, contributing to a rich tapestry of collective knowledge and experience within the team. Their collaboration reflects a commitment to pushing the boundaries of memory technology and engineering excellence.

Conclusion: Jo-won Lee's contributions to the realm of non-volatile memory devices are significant and impactful. As an inventor, his work at Samsung Electronics Co., Ltd. continues to inspire and drive forward innovations in memory technology, demonstrating the vital role of collaboration and creativity in shaping the future of electronics.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…