The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 18, 2010

Filed:

Feb. 04, 2008
Applicants:

Yoon-dong Park, Yongin-si, KR;

Jo-won Lee, Suwon-si, KR;

Chung-woo Kim, Seongnam-si, KR;

Eun-hong Lee, Anyang-si, KR;

Sun-ae Seo, Hwaseong-si, KR;

Woo-joo Kim, Suwon-si, KR;

Hee-soon Chae, Yongin-si, KR;

Soo-doo Chae, Seongnam-si, KR;

I-hun Song, Seongnam-si, KR;

Inventors:

Yoon-dong Park, Yongin-si, KR;

Jo-won Lee, Suwon-si, KR;

Chung-woo Kim, Seongnam-si, KR;

Eun-hong Lee, Anyang-si, KR;

Sun-ae Seo, Hwaseong-si, KR;

Woo-joo Kim, Suwon-si, KR;

Hee-soon Chae, Yongin-si, KR;

Soo-doo Chae, Seongnam-si, KR;

I-hun Song, Seongnam-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

Provided are a complementary nonvolatile memory device, methods of operating and manufacturing the same, a logic device and semiconductor device having the same, and a reading circuit for the same. The complementary nonvolatile memory device includes a first nonvolatile memory and a second nonvolatile memory which are sequentially stacked and have a complementary relationship. The first and second nonvolatile memories are arranged so that upper surfaces thereof are contiguous.


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