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For the Inventor, By the Inventor

Yongin-si, South Korea

Hee-soon Chae

USPTO Granted Patents = 11

Average Co-Inventor Count = 5.8

ph-index = 5

Forward Citations = 103(Granted Patents)


Location History:

  • Yongin, KR (2003 - 2005)
  • Cheongju, KR (2003 - 2005)
  • Gyeonggi-do, KR (2006)
  • Yongin-si, KR (2007 - 2012)

Company Filing History:

goldMedal11 out of 131,611 
 
Samsung Electronics Co., Ltd.
 patents
silverMedal2 out of 2 
 
Kwang-youl Seo
 patents
where one patent can have more than one assignee

Years Active: 2003-2012

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11 patents (USPTO):Explore Patents
1. 8139387 - Method of erasing a memory device including complementary nonvolatile memory devices (2012-03-20),
2. 7719871 - Methods of operating and manufacturing logic device and semiconductor device including complementary nonvolatile memory device, and reading circuit for the same (2010-05-18),
3. 7349262 - Methods of programming silicon oxide nitride oxide semiconductor (SONOS) memory devices (2008-03-25),
4. 7345898 - Complementary nonvolatile memory device (2008-03-18),
5. 7208365 - Nonvolatile memory device and method of manufacturing the same (2007-04-24),
6. 7202521 - Silicon-oxide-nitride-oxide-silicon (SONOS) memory device and methods of manufacturing and operating the same (2007-04-10),
7. 7112842 - Nonvolatile memory device and method of manufacturing the same (2006-09-26),
8. 6946346 - Method for manufacturing a single electron memory device having quantum dots between gate electrode and single electron storage element (2005-09-20),
9. 6936884 - Nonvolatile silicon/oxide/nitride/silicon/nitride/oxide/silicon memory (2005-08-30),
10. 6670670 - Single electron memory device comprising quantum dots between gate electrode and single electron storage element and method for manufacturing the same (2003-12-30),
11. 6664123 - Method for etching metal layer on a scale of nanometers (2003-12-16),

Title: Hee-soon Chae: Innovator in Nonvolatile Memory Technology

Introduction

Hee-soon Chae is a prominent inventor based in Yongin-si, South Korea. He has made significant contributions to the field of nonvolatile memory devices, holding a total of 11 patents. His work focuses on innovative methods and devices that enhance memory technology.

Latest Patents

One of Hee-soon Chae's latest patents is a method of erasing a memory device that includes complementary nonvolatile memory devices. This invention provides a complementary nonvolatile memory device, along with methods for operating and manufacturing it. The device features a first and second nonvolatile memory that are sequentially stacked and have a complementary relationship. The arrangement ensures that the upper surfaces of these memories are contiguous, which is crucial for their functionality.

Another notable patent involves methods of operating and manufacturing logic devices and semiconductor devices that incorporate the complementary nonvolatile memory device. This innovation also includes a reading circuit designed for the same, further enhancing the efficiency and effectiveness of memory technology.

Career Highlights

Hee-soon Chae has worked with leading companies in the technology sector, including Samsung Electronics Co., Ltd. His experience in these organizations has allowed him to develop and refine his innovative ideas in memory technology.

Collaborations

Hee-soon Chae has collaborated with notable colleagues, including Chung-woo Kim and Soo-doo Chae, who have contributed to his research and development efforts in the field.

Conclusion

Hee-soon Chae's contributions to nonvolatile memory technology are significant and impactful. His innovative patents and collaborations highlight his role as a leading inventor in this critical area of technology.

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