The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2007
Filed:
Oct. 12, 2004
Moon-kyung Kim, Yongin-si, KR;
Chung-woo Kim, Seongnam-si, KR;
Jo-won Lee, Suwon-si, KR;
Eun-hong Lee, Anyang-si, KR;
Hee-soon Chae, Yongin-si, KR;
Moon-kyung Kim, Yongin-si, KR;
Chung-woo Kim, Seongnam-si, KR;
Jo-won Lee, Suwon-si, KR;
Eun-hong Lee, Anyang-si, KR;
Hee-soon Chae, Yongin-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
In a silicon-oxide-nitride-oxide-silicon (SONOS) memory device, and methods of manufacturing and operating the same, the SONOS memory device includes a semiconductor layer including source and drain regions and a channel region, an upper stack structure formed on the semiconductor layer, the upper stack structure and the semiconductor layer forming an upper SONOS memory device, and a lower stack structure formed under the semiconductor layer, the lower stack structure and the semiconductor layer forming a lower SONOS memory device.