The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2005
Filed:
Oct. 14, 2003
Soo-doo Chae, Seoul, KR;
Ju-hyung Kim, Yongin, KR;
Chung-woo Kim, Seongnam, KR;
Hee-soon Chae, Cheongju, KR;
Won-il Ryu, Seoul, KR;
Soo-doo Chae, Seoul, KR;
Ju-hyung Kim, Yongin, KR;
Chung-woo Kim, Seongnam, KR;
Hee-soon Chae, Cheongju, KR;
Won-il Ryu, Seoul, KR;
Samsung Electronics Co., Ltd., Kyungki-do, KR;
Abstract
A nonvolatile silicon/oxide/nitride/silicon/nitride/oxide/silicon (SONSNOS) structure memory device includes a first insulating layer and a second insulating layer stacked on a channel of a substrate, a first dielectric layer and a second dielectric layer formed on the first insulating layer and under the second insulating layer, respectively, and a group IV semiconductor layer, silicon quantum dots, or metal quantum dots interposed between the first dielectric layer and the second dielectric layer. The provided SONSNOS structure memory device improves a programming rate and the capacity of the memory.