Yongin, South Korea

Ju-hyung Kim

This inventor holds 4 USPTO granted patents and 1 published patent application. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2005-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ju-hyung Kim. Retrieved from https://idiyas.com/inventor/ju-hyung-kim-yzp8pgc8

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 4 

% Patents Active = 100.0

Average Co-Inventor Count = 3.3

ph-index = 3

Forward Citations = 50(Granted Patents)


Location History:

  • Yongin, KR (2005 - 2009)
  • Youngin-si, KR (2016)

Company Filing History:


Years Active: 2005-2016

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4 patents (USPTO):Explore Patents

Title: Innovations of Ju-hyung Kim

Introduction

Ju-hyung Kim is a prominent inventor based in Yongin, South Korea. He has made significant contributions to the field of nonvolatile memory devices and single electron transistors. With a total of four patents to his name, Kim continues to push the boundaries of technology.

Latest Patents

One of his latest patents is for a nonvolatile memory device and an erase method thereof. This device includes a plurality of cell strings disposed on a substrate, where at least one of the cell strings comprises multiple cell transistors and a ground select transistor. The substrate and the channel region of the cell strings share the same conductivity type. Additionally, a substrate bias circuit is designed to provide an erase voltage during the erase operation, while a ground select line voltage generator supplies a saturation voltage to the ground select transistor.

Another notable patent is for a method of fabricating a single electron transistor with a memory function. This invention involves stacking a first substrate and an insulation film, followed by a second substrate that includes a source region, a channel region, and a drain region. A tunneling film is formed on the second substrate, and at least two trap layers are created on the tunneling film. This design allows for the formation of a quantum dot in the channel region, simplifying the fabrication process and reducing power consumption.

Career Highlights

Ju-hyung Kim is currently employed at Samsung Electronics Co., Ltd., where he applies his expertise in developing advanced electronic components. His work has been instrumental in enhancing the performance and efficiency of memory devices.

Collaborations

Throughout his career, Kim has collaborated with notable colleagues, including Soo-doo Chae and Chung-woo Kim. These partnerships have contributed to the successful development of innovative technologies.

Conclusion

Ju-hyung Kim's contributions to the field of electronics, particularly in nonvolatile memory devices and single electron transistors, highlight his role as a leading inventor. His patents reflect a commitment to innovation and technological advancement.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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