The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2016
Filed:
Jun. 13, 2014
Samsung Electronics Co., Ltd., Suwon-si, Gyonggi-do, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;
Abstract
A nonvolatile memory device includes: a plurality of cell strings disposed on a substrate, wherein at least one of the plurality of cell strings comprises a plurality of cell transistors and at least one ground select transistor stacked in a direction substantially perpendicular to the substrate, and the substrate and a channel region of the plurality of cell strings have a same conductivity type; a substrate bias circuit configured to provide an erase voltage to the substrate in an erase operation; and a ground select line voltage generator configured to provide a ground select line saturation voltage to the at least one ground select transistor in the erase operation.