The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2005
Filed:
Oct. 09, 2003
Soo-doo Chae, Seoul, KR;
Byong-man Kim, Gunpo, KR;
Moon-kyung Kim, Yongin, KR;
Hee-soon Chae, Yongin, KR;
Won-il Ryu, Seoul, KR;
Soo-doo Chae, Seoul, KR;
Byong-man Kim, Gunpo, KR;
Moon-kyung Kim, Yongin, KR;
Hee-soon Chae, Yongin, KR;
Won-il Ryu, Seoul, KR;
Samsung Electronics Co., Ltd., Kyungki-do, KR;
Abstract
In a method for manufacturing a single electron memory device including a single electron storage element in a gate lamination pattern formed on a nano-scale channel region of a MOSFET, formation of the gate lamination pattern includes sequentially forming a lower layer and a single electron storage medium for storing a single electron tunneling through the lower layer on a substrate, forming an upper layer including a plurality of quantum dots on the single electron storage medium, forming a gate electrode layer on the upper layer to be in contact with the plurality of quantum dots, and patterning the lower layer, the single electron storage medium, the upper layer, and the gate electrode layer, in reverse order.