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For the Inventor, By the Inventor

Gunpo, South Korea

Byong-man Kim

USPTO Granted Patents = 15

Average Co-Inventor Count = 3.0

ph-index = 7

Forward Citations = 151(Granted Patents)


Location History:

  • Kunpo, KR (2001 - 2002)
  • Kyungki-do, KR (2001 - 2004)
  • Gupo, KR (2006)
  • Gunpo, KR (2003 - 2008)

Company Filing History:

goldMedal15 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2001-2008

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15 patents (USPTO):Explore Patents
1. 7407856 - Method of manufacturing a memory device (2008-08-05),
2. 7020064 - Rewritable data storage using carbonaceous material and writing/reading method thereof (2006-03-28),
3. 6999346 - Memory device comprising single transistor having functions of RAM and ROM and methods for operating and manufacturing the same (2006-02-14),
4. 6946346 - Method for manufacturing a single electron memory device having quantum dots between gate electrode and single electron storage element (2005-09-20),
5. 6867999 - Memory device including a transistor having functions of RAM and ROM (2005-03-15),
6. 6740925 - Memory device comprising single transistor having functions of RAM and ROM and methods for operating and manufacturing the same (2004-05-25),
7. 6687210 - High-density information storage apparatus using electron emission and methods of writing, reading and erasing information using the same (2004-02-03),
8. 6670670 - Single electron memory device comprising quantum dots between gate electrode and single electron storage element and method for manufacturing the same (2003-12-30),
9. 6664123 - Method for etching metal layer on a scale of nanometers (2003-12-16),
10. 6597036 - Multi-value single electron memory using double-quantum dot and driving method thereof (2003-07-22),
11. 6479365 - Single electron transistor using porous silicon and manufacturing method thereof (2002-11-12),
12. 6414333 - Single electron transistor using porous silicon (2002-07-02),
13. 6388268 - Semiconducting YBCO device and superconducting YBCO device locally converted by AFM tip and manufacturing methods therefor (2002-05-14),
14. 6313503 - MNOS-type memory using single electron transistor and driving method thereof (2001-11-06),
15. 6268273 - Fabrication method of single electron tunneling device (2001-07-31),
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