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For the Inventor, By the Inventor

Gunpo, South Korea

Byong-man Kim

USPTO Granted Patents = 15

Average Co-Inventor Count = 3.0

ph-index = 7

Forward Citations = 151(Granted Patents)


Location History:

  • Kunpo, KR (2001 - 2002)
  • Kyungki-do, KR (2001 - 2004)
  • Gupo, KR (2006)
  • Gunpo, KR (2003 - 2008)

Company Filing History:

goldMedal15 out of 131,611 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2001-2008

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15 patents (USPTO):Explore Patents
1. 7407856 - Method of manufacturing a memory device (2008-08-05),
2. 7020064 - Rewritable data storage using carbonaceous material and writing/reading method thereof (2006-03-28),
3. 6999346 - Memory device comprising single transistor having functions of RAM and ROM and methods for operating and manufacturing the same (2006-02-14),
4. 6946346 - Method for manufacturing a single electron memory device having quantum dots between gate electrode and single electron storage element (2005-09-20),
5. 6867999 - Memory device including a transistor having functions of RAM and ROM (2005-03-15),
6. 6740925 - Memory device comprising single transistor having functions of RAM and ROM and methods for operating and manufacturing the same (2004-05-25),
7. 6687210 - High-density information storage apparatus using electron emission and methods of writing, reading and erasing information using the same (2004-02-03),
8. 6670670 - Single electron memory device comprising quantum dots between gate electrode and single electron storage element and method for manufacturing the same (2003-12-30),
9. 6664123 - Method for etching metal layer on a scale of nanometers (2003-12-16),
10. 6597036 - Multi-value single electron memory using double-quantum dot and driving method thereof (2003-07-22),
11. 6479365 - Single electron transistor using porous silicon and manufacturing method thereof (2002-11-12),
12. 6414333 - Single electron transistor using porous silicon (2002-07-02),
13. 6388268 - Semiconducting YBCO device and superconducting YBCO device locally converted by AFM tip and manufacturing methods therefor (2002-05-14),
14. 6313503 - MNOS-type memory using single electron transistor and driving method thereof (2001-11-06),
15. 6268273 - Fabrication method of single electron tunneling device (2001-07-31),

Title: Byong-man Kim: Innovator in Memory Device Technology

Introduction

Byong-man Kim is a prominent inventor based in Gunpo, South Korea. He has made significant contributions to the field of memory device technology, holding a total of 15 patents. His work has been instrumental in advancing the capabilities of data storage solutions.

Latest Patents

Among his latest patents is a method of manufacturing a memory device. This innovative method includes defining a field region and an active region in a substrate, forming a field oxide layer on the field region, and creating an insulating layer on the active region. The process involves patterning the insulating layer to form first and second bit lines that are separated from and parallel to each other on the active region. Additionally, it includes forming a memory element for storing data in a nonvolatile state, which passes across the first and second bit lines, and forming a word line on the insulating layer and the memory element.

Another notable patent is for rewritable data storage using a carbonaceous material. This technology allows for writing or erasing information represented by the carbonaceous material through a current-induced electrochemical reaction on a conductive layer. The size of the carbonaceous material representing information can be controlled by the level of the applied voltage or the duration of its application.

Career Highlights

Byong-man Kim is currently employed at Samsung Electronics Co., Ltd., where he continues to innovate and develop cutting-edge technologies in memory devices. His work has not only contributed to the company's success but has also influenced the broader field of electronics.

Collaborations

Throughout his career, Byong-man Kim has collaborated with talented individuals such as Jo-won Lee and Moon-kyung Kim. These collaborations have fostered a creative environment that has led to numerous advancements in technology.

Conclusion

Byong-man Kim's contributions to memory device technology exemplify the spirit of innovation. His patents reflect a deep understanding of the complexities of data storage and a commitment to advancing the field. His work at Samsung Electronics Co., Ltd. continues to shape the future of technology.

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