The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2001
Filed:
Jun. 22, 2000
Applicant:
Inventors:
Jo-won Lee, Suwon, KR;
Moon-kyung Kim, Seoul, KR;
Byong-man Kim, Kunpo, KR;
Seok-yeol Yoon, Seoul, KR;
Hyung-lae Roh, Seongnam, KR;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/9792 ;
U.S. Cl.
CPC ...
H01L 2/9792 ;
Abstract
A metal nitride oxide semiconductor (MNOS) type memory using a threshold voltage variation (&Dgr;Vth) due to charging of a single electron when the width of a channel of the memory is set to be smaller than or equal to the Debye screen length (LD) of an electron, and a driving method thereof, are provided. The MNOS memory uses a threshold voltage variation (&Dgr;Vth) due to charging of a single electron occurring when the width of a channel is set to be smaller than or equal to the Debye screen length (LD) which depends on the impurity concentration of a semiconductor substrate.