The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2003
Filed:
Oct. 20, 2000
Applicant:
Inventors:
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/9788 ;
U.S. Cl.
CPC ...
H01L 2/9788 ;
Abstract
A multi-value single electron memory using a multi-quantum dot, in which the floating gates (FG) of a EEPROM or a flash memory are formed to act as two quantum dots, and the two quantum dots are applied to multi-value memories, and a driving method of the multi-value single electron memory, are provided. Thus, a multi-value memory can be realized using two quantum dots. Also, an ultra-highly integrated memory of 1 Tb or greater can be realized without encountering a physical limit such as a short channel effect (SCE) caused by scaling down MOSFETs, in contrast to other memories.