The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2010
Filed:
Sep. 12, 2008
Soo-doo Chae, Seongnam-si, KR;
Moon-kyung Kim, Yongin-si, KR;
Jo-won Lee, Suwon-si, KR;
Chung-woo Kim, Seongnam-si, KR;
Soo-doo Chae, Seongnam-si, KR;
Moon-kyung Kim, Yongin-si, KR;
Jo-won Lee, Suwon-si, KR;
Chung-woo Kim, Seongnam-si, KR;
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Abstract
A multi-bit non-volatile memory device and methods of operating and fabricating the same may be provided. The memory device may include a channel region formed in a semiconductor substrate, and a source and drain that form a Schottky contact with the channel region. Also, a central gate electrode may be located on a portion of the channel region, and first and second sidewall gate electrodes may be formed on the channel region along the outer sides of the central gate electrode. First and second storage nodes may be formed between the channel region and the sidewall gate electrodes.