The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2005
Filed:
Nov. 17, 2003
Won-bong Choi, Suwon, KR;
Jo-won Lee, Suwon, KR;
Ho-kyu Kang, Yongin, KR;
Chung-woo Kim, Seongnam, KR;
Won-bong Choi, Suwon, KR;
Jo-won Lee, Suwon, KR;
Ho-kyu Kang, Yongin, KR;
Chung-woo Kim, Seongnam, KR;
Samsung Electronics Co., Ltd., Kyungki-do, KR;
Abstract
A nonvolatile memory device includes a substrate having a source region; a nanotube array including a plurality of nanotube columns that are vertically grown on the substrate such that a first end of the nanotube array is in contact with the source region, the nanotube array functioning as an electron transport channel; a memory cell formed around an outer side surface of the nanotube array; a control gate formed around an outer side surface of the memory cell; and a drain region in contact with a second end of the nanotube array and the memory cell, wherein the second end of the nanotube array is distal to the first end of the nanotube array.