The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2008
Filed:
Aug. 10, 2005
Won-il Ryu, Seoul, KR;
Jo-won Lee, Suwon-si, KR;
Se-wook Yoon, Seoul, KR;
Chung-woo Kim, Seongnam-si, KR;
Won-il Ryu, Seoul, KR;
Jo-won Lee, Suwon-si, KR;
Se-wook Yoon, Seoul, KR;
Chung-woo Kim, Seongnam-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
In a silicon-oxide-nitride-oxide-silicon (SONOS) memory device and a method of manufacturing the same, a SONOS memory device includes a semiconductor substrate, an insulating layer deposited on the semiconductor substrate, an active layer formed on a predetermined region of the insulating layer and divided into a source region, a drain region, and a channel region, a first side gate stack formed at a first side of the channel region, and a second side gate stack formed at a second side of the channel region opposite the first side of the channel region. In the SONOS memory device, at least two bits of data may be stored in each SONOS memory device, thereby allowing the integration density of the semiconductor memory device to be increased without increasing an area thereof.