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For the Inventor, By the Inventor

Suwon-si, South Korea

Jinhyun Shin

USPTO Granted Patents = 18 

Average Co-Inventor Count = 3.3

ph-index = 6

Forward Citations = 538(Granted Patents)


Company Filing History:

goldMedal18 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2012-2018

where 'Filed Patents' based on already Granted Patents

18 patents (USPTO):
1. 10153295 - Nonvolatile memory devices and methods of forming same (2018-12-11),
2. 10128266 - Three-dimensional semiconductor memory device (2018-11-13),
3. 9911745 - Three-dimensionally integrated circuit devices including oxidation suppression layers (2018-03-06),
4. 9773795 - Semiconductor devices having airgaps and methods of manufacturing the same (2017-09-26),
5. 9711531 - Semiconductor device and method of fabricating the same (2017-07-18),
6. 9704878 - Nonvolatile memory devices and methods of forming same (2017-07-11),
7. 9659958 - Three-dimensional semiconductor memory device (2017-05-23),
8. 9601577 - Three-dimensionally integrated circuit devices including oxidation suppression layers (2017-03-21),
9. 9379123 - Semiconductor memory devices and methods of fabricating the same (2016-06-28),
10. 9379115 - Semiconductor device having a resistor and methods of forming the same (2016-06-28),
11. 9378979 - Methods of fabricating semiconductor devices and devices fabricated thereby (2016-06-28),
12. 9166012 - Semiconductor memory devices including an air gap and methods of fabricating the same (2015-10-20),
13. 9041088 - Non-volatile memory devices having air gaps and methods of manufacturing the same (2015-05-26),
14. 8975684 - Methods of forming non-volatile memory devices having air gaps (2015-03-10),
15. 8969215 - Methods of fabricating semiconductor devices using double patterning technology (2015-03-03),

Title: The Innovations of Jinhyun Shin: A Pioneer in Nonvolatile Memory Devices

Introduction: Jinhyun Shin, based in Suwon-si, South Korea, is an accomplished inventor known for his significant contributions to the field of nonvolatile memory devices. With a total of 18 patents, Shin has made remarkable strides in advancing semiconductor technology, particularly in NAND-type memory devices.

Latest Patents: Among his latest patents, two stand out for their innovative designs and methodologies. The first patent focuses on "Nonvolatile memory devices and methods of forming same," detailing a vertical NAND-type memory device that features a unique vertical stack of inter-gate insulating layers and gate electrodes. This design includes a cell array region and a contact region, enhancing memory efficiency and performance. The second patent, titled "Three-dimensional semiconductor memory device," outlines a sophisticated architecture that incorporates lower and upper selection lines along with cell gate structures, showcasing Jinhyun Shin's commitment to pushing the boundaries of memory technology.

Career Highlights: Jinhyun Shin currently works for Samsung Electronics Co., Ltd., a leading global technology company renowned for its innovative electronic products and solutions. Throughout his career, Shin has focused on developing advanced memory technologies that address the growing demands of data storage and retrieval.

Collaborations: In his professional journey, Jinhyun has collaborated with notable coworkers, including Jae-Hwang Sim and Dong-Sik Lee. Their collective efforts have fostered an environment of innovation, leading to groundbreaking advancements in memory technology.

Conclusion: Jinhyun Shin's dedication to innovation in nonvolatile memory devices has positioned him as a key figure in the semiconductor industry. With a portfolio of 18 patents and a strong foundation in pioneering technologies, Shin's work continues to influence the future of memory solutions.

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