Jinhyun Shin

This inventor holds 18 USPTO granted patents and 3 published patent applications. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2012-2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jinhyun Shin. Retrieved from https://idiyas.com/inventor/jinhyun-shin

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 18 (Patent Applications = 3)

% Patents Active = 100.0

Average Co-Inventor Count = 3.3

ph-index = 6

Forward Citations = 552(Granted Patents)

Company Filing History:

18 out of 132,108

Samsung Electronics Co., Ltd.

patents

Years Active: 2012-2018

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18 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10153295 - Nonvolatile memory devices and methods of forming same (2018-12-11),

2. 10128266 - Three-dimensional semiconductor memory device (2018-11-13),

3. 9911745 - Three-dimensionally integrated circuit devices including oxidation suppression layers (2018-03-06),

4. 9773795 - Semiconductor devices having airgaps and methods of manufacturing the same (2017-09-26),

5. 9711531 - Semiconductor device and method of fabricating the same (2017-07-18),

6. 9704878 - Nonvolatile memory devices and methods of forming same (2017-07-11),

7. 9659958 - Three-dimensional semiconductor memory device (2017-05-23),

8. 9601577 - Three-dimensionally integrated circuit devices including oxidation suppression layers (2017-03-21),

9. 9379123 - Semiconductor memory devices and methods of fabricating the same (2016-06-28),

10. 9379115 - Semiconductor device having a resistor and methods of forming the same (2016-06-28),

11. 9378979 - Methods of fabricating semiconductor devices and devices fabricated thereby (2016-06-28),

12. 9166012 - Semiconductor memory devices including an air gap and methods of fabricating the same (2015-10-20),

13. 9041088 - Non-volatile memory devices having air gaps and methods of manufacturing the same (2015-05-26),

14. 8975684 - Methods of forming non-volatile memory devices having air gaps (2015-03-10),

15. 8969215 - Methods of fabricating semiconductor devices using double patterning technology (2015-03-03),

Title: The Innovations of Jinhyun Shin: A Pioneer in Nonvolatile Memory Devices

Introduction: Jinhyun Shin, based in Suwon-si, South Korea, is an accomplished inventor known for his significant contributions to the field of nonvolatile memory devices. With a total of 18 patents, Shin has made remarkable strides in advancing semiconductor technology, particularly in NAND-type memory devices.

Latest Patents: Among his latest patents, two stand out for their innovative designs and methodologies. The first patent focuses on "Nonvolatile memory devices and methods of forming same," detailing a vertical NAND-type memory device that features a unique vertical stack of inter-gate insulating layers and gate electrodes. This design includes a cell array region and a contact region, enhancing memory efficiency and performance. The second patent, titled "Three-dimensional semiconductor memory device," outlines a sophisticated architecture that incorporates lower and upper selection lines along with cell gate structures, showcasing Jinhyun Shin's commitment to pushing the boundaries of memory technology.

Career Highlights: Jinhyun Shin currently works for Samsung Electronics Co., Ltd., a leading global technology company renowned for its innovative electronic products and solutions. Throughout his career, Shin has focused on developing advanced memory technologies that address the growing demands of data storage and retrieval.

Collaborations: In his professional journey, Jinhyun has collaborated with notable coworkers, including Jae-Hwang Sim and Dong-Sik Lee. Their collective efforts have fostered an environment of innovation, leading to groundbreaking advancements in memory technology.

Conclusion: Jinhyun Shin's dedication to innovation in nonvolatile memory devices has positioned him as a key figure in the semiconductor industry. With a portfolio of 18 patents and a strong foundation in pioneering technologies, Shin's work continues to influence the future of memory solutions.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

3 patents pending: