The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2015
Filed:
Nov. 13, 2013
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Jae-Hwang Sim, Hwaseong-si, KR;
Jinhyun Shin, Suwon-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/311 (2006.01); H01L 21/033 (2006.01); H01L 21/3213 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31144 (2013.01); H01L 21/0337 (2013.01); H01L 21/0338 (2013.01); H01L 21/32139 (2013.01); H01L 27/11519 (2013.01);
Abstract
Methods of fabricating semiconductor devices and semiconductor devices fabricated thereby are provided. Two photolithography processes and two spacer processes are performed to provide final patterns that have a pitch that is smaller than a limitation of photolithography process. Furthermore, since initial patterns are formed to have line and pad portions simultaneously by performing a first photolithography process, there is no necessity to perform an additional photolithography process for forming the pad portion.