The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 26, 2017

Filed:

Apr. 21, 2015
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jae-Hwang Sim, Hwaseong-si, KR;

Jinhyun Shin, Suwon-si, KR;

HoJun Seong, Hwaseong-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/11 (2006.01); H01L 27/11521 (2017.01); H01L 29/06 (2006.01); H01L 21/764 (2006.01); H01L 29/788 (2006.01); H01L 27/11524 (2017.01); H01L 27/11517 (2017.01); H01L 27/11563 (2017.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11521 (2013.01); H01L 21/764 (2013.01); H01L 21/76289 (2013.01); H01L 27/11517 (2013.01); H01L 27/11524 (2013.01); H01L 27/11563 (2013.01); H01L 29/0649 (2013.01); H01L 29/0653 (2013.01); H01L 29/7881 (2013.01);
Abstract

Disclosed are non-volatile memory devices and methods of manufacturing the same. The non-volatile memory device includes device isolation patterns defining active portions in a substrate and gate structures disposed on the substrate. The active portions are spaced apart from each other in a first direction and extend in a second direction perpendicular to the first direction. The gate structures are spaced apart from each other in the second direction and extend in the first direction. Each of the device isolation patterns includes a first air gap, and each of a top surface and a bottom surface of the first air gap has a wave-shape in a cross-sectional view taken along the second direction.


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