The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2017
Filed:
Oct. 05, 2016
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Woong-Seop Lee, Gyeonggi-do, KR;
Jongyoon Choi, Seoul, KR;
Jinhyun Shin, Suwon-si, KR;
Dong-Sik Lee, Osan-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 27/11582 (2017.01); H01L 29/10 (2006.01); H01L 27/11568 (2017.01); H01L 29/04 (2006.01); H01L 27/11565 (2017.01); H01L 29/423 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/0243 (2013.01); H01L 21/02636 (2013.01); H01L 27/11565 (2013.01); H01L 27/11568 (2013.01); H01L 29/04 (2013.01); H01L 29/1037 (2013.01); H01L 29/1054 (2013.01); H01L 29/4234 (2013.01);
Abstract
A method of fabricating a semiconductor device can include forming a channel hole in a vertical stack of alternating insulating and sacrificial layers to form a recess in a substrate. A selectively epitaxial growth can be performed to provide a lower semiconductor pattern in the recess using material of the substrate as a seed and a recess can be formed to penetrate an upper surface of the lower semiconductor pattern via the channel hole.