The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 06, 2018

Filed:

Feb. 07, 2017
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Dong-Sik Lee, Osan-si, KR;

Youngwoo Kim, Hwaseong-si, KR;

Jinhyun Shin, Suwon-si, KR;

Jung Hoon Lee, Hwaseong-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11551 (2017.01); H01L 27/11573 (2017.01); H01L 27/11582 (2017.01); H01L 27/11 (2006.01); H01L 27/11556 (2017.01); H01L 27/108 (2006.01); H01L 27/11529 (2017.01); H01L 27/112 (2006.01); H01L 27/11526 (2017.01); H01L 27/115 (2017.01); H01L 21/8234 (2006.01); H01L 27/11597 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11551 (2013.01); H01L 21/823462 (2013.01); H01L 27/10897 (2013.01); H01L 27/1104 (2013.01); H01L 27/115 (2013.01); H01L 27/1116 (2013.01); H01L 27/11246 (2013.01); H01L 27/11526 (2013.01); H01L 27/11529 (2013.01); H01L 27/11556 (2013.01); H01L 27/11573 (2013.01); H01L 27/11582 (2013.01); H01L 27/11597 (2013.01);
Abstract

A vertically integrated circuit device can include a substrate having a first region reserved for first functional circuits of the vertically integrated circuit device, where the first functional circuits has a substantially constant top surface level across the first region and having a second region reserved for second functional circuits of the vertically integrated circuit device and spaced apart from the first region. The second functional circuits can have a varied top surface level across the second region. A doped oxidation suppressing material can be included in the substrate and can extend from the first region to the second region at an interface of the substrate with the first functional circuits and the second functional circuits, respectively.


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