IDiyas

For the Inventor, By the Inventor

Saratoga, CA, United States of America

Jinho Kim

LinkedIn
USPTO Granted Patents = 22 

 

Average Co-Inventor Count = 5.9

ph-index = 4

Forward Citations = 93(Granted Patents)


Company Filing History:

goldMedal22 out of 622 
 
Silicon Storage Technology, Inc.
 patents

Years Active: 2016-2025

Loading Chart...
Loading Chart...
22 patents (USPTO):
1. 12453136 - Method of forming a device with planar split gate non-volatile memory cells, planar HV devices, and FinFET logic devices on a substrate (2025-10-21),
2. 12131786 - Memory cell array with row direction gap between erase gate lines and dummy floating gates (2024-10-29),
3. 12020762 - Method of determining defective die containing non-volatile memory cells (2024-06-25),
4. 11594453 - Method of forming a device with split gate non-volatile memory cells, HV devices having planar channel regions and FINFET logic devices (2023-02-28),
5. 11362218 - Method of forming split gate memory cells with thinned side edge tunnel oxide (2022-06-14),
6. 11183506 - Method of making embedded memory device with silicon-on-insulator substrate (2021-11-23),
7. 11114451 - Method of forming a device with FinFET split gate non-volatile memory cells and FinFET logic devices (2021-09-07),
8. 11018147 - Method of forming split gate memory cells with thinned tunnel oxide (2021-05-25),
9. 10937794 - Split gate non-volatile memory cells with FinFET structure and HKMG memory and logic gates, and method of making same (2021-03-02),
10. 10818680 - Split gate non-volatile memory cells and logic devices with FINFET structure, and method of making same (2020-10-27),
11. 10797142 - FinFET-based split gate non-volatile flash memory with extended source line FinFET, and method of fabrication (2020-10-06),
12. 10790292 - Method of making embedded memory device with silicon-on-insulator substrate (2020-09-29),
13. 10727240 - Split gate non-volatile memory cells with three-dimensional FinFET structure (2020-07-28),
14. 10644012 - Method of making split gate non-volatile memory cells with three-dimensional FinFET structure, and method of making same (2020-05-05),
15. 10468428 - Split gate non-volatile memory cells and logic devices with FinFET structure, and method of making same (2019-11-05),

Title: Innovations and Contributions of Jinho Kim in Non-Volatile Memory Technology

Introduction

Jinho Kim, a prominent inventor based in Saratoga, CA, has made significant contributions to the field of non-volatile memory technology. With a remarkable portfolio of 21 patents, he continues to advance the realm of semiconductor technology through innovative solutions tailored for memory cell arrays.

Latest Patents

Some of Jinho Kim's latest patents include a sophisticated design for a memory cell array featuring a row direction gap between erase gate lines and dummy floating gates. This invention enhances the efficiency of non-volatile memory cells by streamlining the arrangement of the memory cells, including spaced apart source and drain regions on a semiconductor substrate. His recent work also introduces a method for determining defective dies containing non-volatile memory cells. This method involves specific steps for testing the memory cells, employing read operations to assess their functionality and assess the die's acceptability based on defined criteria.

Career Highlights

Jinho Kim holds an esteemed position at Silicon Storage Technology, Inc., where he utilizes his expertise in semiconductor design and memory technology. His extensive experience has not only contributed to his patent achievements but also positioned him as a leading figure within industry innovation.

Collaborations

At Silicon Storage Technology, Inc., Jinho collaborates with noteworthy colleagues, including Nhan Do and Xian Liu. Their collective efforts foster an environment of creativity and technological advancement, enabling them to push the boundaries of what is achievable in non-volatile memory technology.

Conclusion

Jinho Kim exemplifies the essence of innovation in the semiconductor industry. Through his extensive patent portfolio and collaborative spirit, he significantly impacts the field of non-volatile memory technology, paving the way for future advancements and applications.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…