The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2024
Filed:
Jan. 14, 2022
Silicon Storage Technology, Inc., San Jose, CA (US);
Yuri Tkachev, Sunnyvale, CA (US);
Jinho Kim, Saratoga, CA (US);
Cynthia Fung, San Jose, CA (US);
Gilles Festes, Fuveau, FR;
Bernard Bertello, Bouches du Rhones, FR;
Parviz Ghazavi, San Jose, CA (US);
Bruno Villard, Aix en Provence, FR;
Jean Francois Thiery, Vaucluse, FR;
Catherine Decobert, Pourrieres, FR;
Serguei Jourba, Aix en Provence, FR;
Fan Luo, Fremont, CA (US);
Latt Tee, San Francisco, CA (US);
Nhan Do, Saratoga, CA (US);
Silicon Storage Technology, Inc., San Jose, CA (US);
Abstract
A method of testing non-volatile memory cells formed on a die includes erasing the memory cells and performing a first read operation to determine a lowest read current RCfor the memory cells and a first number Nof the memory cells having the lowest read current RC. A second read operation is performed to determine a second number Nof the memory cells having a read current not exceeding a target read current RC. The target read current RCis equal to the lowest read current RCplus a predetermined current value. The die is determined to be acceptable if the second number Nis determined to exceed the first number Nplus a predetermined number. The die is determined to be defective if the second number Nis determined not to exceed the first number Nplus the predetermined number.