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For the Inventor, By the Inventor

Aix en Provence, France

Serguei Jourba

USPTO Granted Patents = 13 

 

Average Co-Inventor Count = 6.1

ph-index = 3

Forward Citations = 22(Granted Patents)


Company Filing History:

goldMedal13 out of 622 
 
Silicon Storage Technology, Inc.
 patents

Years Active: 2019-2025

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13 patents (USPTO):
1. 12453136 - Method of forming a device with planar split gate non-volatile memory cells, planar HV devices, and FinFET logic devices on a substrate (2025-10-21),
2. 12144172 - Method of forming a semiconductor device with memory cells, high voltage devices and logic devices on a substrate using a dummy area (2024-11-12),
3. 12020762 - Method of determining defective die containing non-volatile memory cells (2024-06-25),
4. 11968829 - Method of forming memory cells, high voltage devices and logic devices on a semiconductor substrate (2024-04-23),
5. 11594453 - Method of forming a device with split gate non-volatile memory cells, HV devices having planar channel regions and FINFET logic devices (2023-02-28),
6. 11114451 - Method of forming a device with FinFET split gate non-volatile memory cells and FinFET logic devices (2021-09-07),
7. 10937794 - Split gate non-volatile memory cells with FinFET structure and HKMG memory and logic gates, and method of making same (2021-03-02),
8. 10818680 - Split gate non-volatile memory cells and logic devices with FINFET structure, and method of making same (2020-10-27),
9. 10797142 - FinFET-based split gate non-volatile flash memory with extended source line FinFET, and method of fabrication (2020-10-06),
10. 10727240 - Split gate non-volatile memory cells with three-dimensional FinFET structure (2020-07-28),
11. 10644012 - Method of making split gate non-volatile memory cells with three-dimensional FinFET structure, and method of making same (2020-05-05),
12. 10468428 - Split gate non-volatile memory cells and logic devices with FinFET structure, and method of making same (2019-11-05),
13. 10312247 - Two transistor FinFET-based split gate non-volatile floating gate flash memory and method of fabrication (2019-06-04),

Title: The Innovative Contributions of Serguei Jourba

Introduction

Serguei Jourba is a prominent inventor based in Aix en Provence, France. He has made significant contributions to the field of semiconductor technology, holding a total of 13 patents. His work focuses on advanced methods for forming devices that enhance memory and logic functionalities.

Latest Patents

Among his latest patents is a method of forming a device with planar split gate non-volatile memory cells, planar high voltage devices, and FinFET logic devices on a substrate. This innovative method involves several intricate steps, including recessing an upper substrate surface, forming silicon fins, and creating various source, drain, and channel regions. Another notable patent details a method of forming a semiconductor device with memory cells, high voltage devices, and logic devices on a substrate using a dummy area. This process includes the formation of conductive and insulation layers, trenches, and the subsequent filling of these trenches with insulation material.

Career Highlights

Serguei Jourba is currently employed at Silicon Storage Technology, Inc., where he continues to push the boundaries of semiconductor innovation. His expertise in device fabrication has positioned him as a key player in the industry, contributing to advancements that are critical for modern electronics.

Collaborations

Throughout his career, Serguei has collaborated with talented individuals such as Nhan Do and Xian Liu. These partnerships have fostered a creative environment that has led to the development of groundbreaking technologies.

Conclusion

Serguei Jourba's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor. His work continues to shape the future of electronic devices, making significant strides in the industry.

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