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For the Inventor, By the Inventor

Pourrieres, France

Catherine Decobert

USPTO Granted Patents = 14 

 

Average Co-Inventor Count = 6.1

ph-index = 4

Forward Citations = 29(Granted Patents)


Company Filing History:

goldMedal14 out of 623 
 
Silicon Storage Technology, Inc.
 patents

Years Active: 2019-2025

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14 patents (USPTO):Explore Patents
1. 12453136 - Method of forming a device with planar split gate non-volatile memory cells, planar HV devices, and FinFET logic devices on a substrate (2025-10-21),
2. 12020762 - Method of determining defective die containing non-volatile memory cells (2024-06-25),
3. 11594453 - Method of forming a device with split gate non-volatile memory cells, HV devices having planar channel regions and FINFET logic devices (2023-02-28),
4. 11362218 - Method of forming split gate memory cells with thinned side edge tunnel oxide (2022-06-14),
5. 11114451 - Method of forming a device with FinFET split gate non-volatile memory cells and FinFET logic devices (2021-09-07),
6. 11018147 - Method of forming split gate memory cells with thinned tunnel oxide (2021-05-25),
7. 10998325 - Memory cell with floating gate, coupling gate and erase gate, and method of making same (2021-05-04),
8. 10937794 - Split gate non-volatile memory cells with FinFET structure and HKMG memory and logic gates, and method of making same (2021-03-02),
9. 10818680 - Split gate non-volatile memory cells and logic devices with FINFET structure, and method of making same (2020-10-27),
10. 10797142 - FinFET-based split gate non-volatile flash memory with extended source line FinFET, and method of fabrication (2020-10-06),
11. 10727240 - Split gate non-volatile memory cells with three-dimensional FinFET structure (2020-07-28),
12. 10644012 - Method of making split gate non-volatile memory cells with three-dimensional FinFET structure, and method of making same (2020-05-05),
13. 10468428 - Split gate non-volatile memory cells and logic devices with FinFET structure, and method of making same (2019-11-05),
14. 10312247 - Two transistor FinFET-based split gate non-volatile floating gate flash memory and method of fabrication (2019-06-04),

Title: Inventor Spotlight: Catherine Decobert

Introduction

Catherine Decobert is a prominent inventor based in Pourrieres, France. With an impressive portfolio of 13 patents, her contributions to the field of non-volatile memory technology have made significant advancements in the industry.

Latest Patents

Two of her latest patents illustrate her innovative approaches:

1. **Method of determining defective die containing non-volatile memory cells** - This method involves testing non-volatile memory cells formed on a die by conducting a series of read operations to determine their acceptability based on specific electrical parameters.

2. **Method of forming a device with split gate non-volatile memory cells** - In this patent, Catherine details a method of forming a device on a substrate which incorporates various implantation techniques to optimize the performance of non-volatile memory cells, thus enhancing the functionality of memory technologies.

Career Highlights

Catherine currently works at Silicon Storage Technology, Inc., where she applies her expertise in semiconductor technology to innovate new solutions. Her focus on non-volatile memory cells has not only contributed to her personal accolades but has also propelled her company into the forefront of the memory technology market.

Collaborations

Throughout her career, she has collaborated with esteemed colleagues, including Nhan Do and Jinho Kim. These partnerships have fostered a productive environment for innovation, allowing them to work together on various complex projects and patents.

Conclusion

Catherine Decobert's work in the field of non-volatile memory technology is remarkable and signifies her dedication to advancing semiconductor applications. Her 13 patents stand as a testament to her innovative spirit and technical expertise, securing her place in the world of technology and invention.

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