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For the Inventor, By the Inventor

Seoul, South Korea

Jin-seo Noh

USPTO Granted Patents = 17

Average Co-Inventor Count = 3.4

ph-index = 4

Forward Citations = 49(Granted Patents)


Location History:

  • Seoul, KR (2008 - 2011)
  • Seongnam-si, KR (2012)

Company Filing History:

goldMedal17 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2008-2012

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17 patents (USPTO):Explore Patents
1. 8115264 - Semiconductor device having a metal gate with a low sheet resistance and method of fabricating metal gate of the same (2012-02-14),
2. 7993963 - Phase change layer and method of manufacturing the same and phase change memory device comprising phase change layer and methods of manufacturing and operating phase change memory device (2011-08-09),
3. 7956342 - Phase change material for use in a phase change random access memory, the phase change material having uniformly distributed insulating impurities (2011-06-07),
4. 7902011 - Method of fabricating Schottky barrier transistor (2011-03-08),
5. 7872908 - Phase change memory devices and fabrication methods thereof (2011-01-18),
6. 7872250 - Phase-change ram and method for fabricating the same (2011-01-18),
7. 7824953 - Method of operating and structure of phase change random access memory (PRAM) (2010-11-02),
8. 7800186 - Semiconductor device and method of fabricating metal gate of the same (2010-09-21),
9. 7777213 - Phase change layer including indium and method of manufacturing the same and phase change memory device comprising phase change layer including indium and methods of manufacturing and operating the same (2010-08-17),
10. 7674665 - Method of fabricating Schottky barrier transistor (2010-03-09),
11. 7642540 - Phase change random access memory and method of operating the same (2010-01-05),
12. 7599216 - Phase change memory devices and fabrication methods thereof (2009-10-06),
13. 7573058 - Phase change materials, phase change random access memories having the same and methods of operating phase change random access memories (2009-08-11),
14. 7572662 - Method of fabricating phase change RAM including a fullerene layer (2009-08-11),
15. 7541633 - Phase-change RAM and method for fabricating the same (2009-06-02),

Title: Innovations of Jin-seo Noh

Introduction

Jin-seo Noh is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 17 patents. His work focuses on enhancing the performance and efficiency of semiconductor devices.

Latest Patents

One of Jin-seo Noh's latest patents is for a semiconductor device that features a metal gate with low sheet resistance and a method for fabricating this metal gate. This innovation includes a metal gate formed on a gate insulating film, utilizing a metal nitride that contains aluminum or silicon. The design incorporates upper and lower portions with a higher content of aluminum or silicon, and a central portion with a lower content, optimizing the device's performance.

Another notable patent involves a phase change layer and a method for manufacturing it, along with a phase change memory device that includes this layer. The phase change layer is formed from a quaternary compound containing indium, with specific ranges for germanium, antimony, and tellurium, enhancing the functionality of memory devices.

Career Highlights

Jin-seo Noh is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has positioned him as a key player in the development of advanced semiconductor technologies.

Collaborations

Throughout his career, Jin-seo Noh has collaborated with notable colleagues, including Yoon-Ho Khang and Dong-seok Suh. These collaborations have contributed to the successful development of innovative technologies in the semiconductor field.

Conclusion

Jin-seo Noh's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the industry. His work continues to influence advancements in semiconductor devices, showcasing the importance of innovation in technology.

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