The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2011
Filed:
Apr. 22, 2009
Applicants:
Sang-mock Lee, Yongin-si, KR;
Jin-heong Yim, Suwon-si, KR;
Yoon-ho Khang, Yongin-si, KR;
Jin-seo Noh, Seoul, KR;
Dong-seok Suh, Seoul, KR;
Inventors:
Sang-mock Lee, Yongin-si, KR;
Jin-heong Yim, Suwon-si, KR;
Yoon-ho Khang, Yongin-si, KR;
Jin-seo Noh, Seoul, KR;
Dong-seok Suh, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 47/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A PRAM and a fabricating method thereof are provided. The PRAM includes a transistor and a data storage capability. The data storage capability is connected to the transistor. The data storage includes a top electrode, a bottom electrode, and a porous PCM layer. The porous PCM layer is interposed between the top electrode and the bottom electrode.