IDiyas

For the Inventor, By the Inventor

Seoul, South Korea

Dong-seok Suh

USPTO Granted Patents = 24 

Average Co-Inventor Count = 2.7

ph-index = 5

Forward Citations = 108(Granted Patents)


Company Filing History:

goldMedal18 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents
silverMedal6 out of 5,444 
 
University of Texas System
 patents

Years Active: 2008-2012

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24 patents (USPTO):Explore Patents
1. 8319291 - Non-volatile memory device with data storage layer (2012-11-27),
2. 8218359 - Phase change random access memory and methods of manufacturing and operating same (2012-07-10),
3. 8101061 - Material and device properties modification by electrochemical charge injection in the absence of contacting electrolyte for either local spatial or final states (2012-01-24),
4. 8085583 - Vertical string phase change random access memory device (2011-12-27),
5. 8083909 - Material and device properties modification by electrochemical charge injection in the absence of contacting electrolyte for either local spatial or final states (2011-12-27),
6. 8080149 - Material and device properties modification by electrochemical charge injection in the absence of contacting electrolyte for either local spatial or final states (2011-12-20),
7. 8066855 - Material and device properties modification by electrochemical charge injection in the absence of contacting electrolyte for either local spatial or final states (2011-11-29),
8. 8054672 - Non-volatile memory device and method of operating the same (2011-11-08),
9. 8049202 - Phase change memory device having phase change material layer containing phase change nano particles (2011-11-01),
10. 8021524 - Material and device properties modification by electrochemical charge injection in the absence of contacting electrolyte for either local spatial or final states (2011-09-20),
11. 8017929 - Phase change material layers and phase change memory devices including the same (2011-09-13),
12. 7956342 - Phase change material for use in a phase change random access memory, the phase change material having uniformly distributed insulating impurities (2011-06-07),
13. 7897030 - Material and device properties modification by electrochemical charge injection in the absence of contacting electrolyte for either local spatial or final states (2011-03-01),
14. 7872908 - Phase change memory devices and fabrication methods thereof (2011-01-18),
15. 7872250 - Phase-change ram and method for fabricating the same (2011-01-18),

Title: The Innovative Mind of Dong-seok Suh

Introduction

Dong-seok Suh, an esteemed inventor based in Seoul, South Korea, has made significant contributions to the field of memory devices with a remarkable portfolio of 24 patents. His inventive spirit and technical expertise continue to drive advancements in non-volatile memory technologies, paving the way for future innovations.

Latest Patents

Among his latest patents, Suh's work on the non-volatile memory device with data storage layer stands out. This device incorporates at least one horizontal and one vertical electrode, with a data storage layer designed to store data by varying its electrical resistance. The inclusion of a reaction prevention layer enhances the device's reliability, ensuring optimal performance in various applications.

Another significant patent by Suh is the phase change random access memory, which includes a switching device and a uniquely designed gate electrode. This gate electrode increases the electrical resistance of the phase change storage node during reset programming operations, highlighting Suh's innovative approach to enhancing memory device functionality.

Career Highlights

Suh's professional journey includes notable tenures at leading companies, including Samsung Electronics Co., Ltd. and the University of Texas System. His work at these institutions has greatly influenced the development of cutting-edge technologies in the field of memory devices and beyond, thereby establishing him as a prominent figure in the industry.

Collaborations

Throughout his career, Dong-seok Suh has collaborated with talented individuals such as Yoon-Ho Khang and Jin-seo Noh. These partnerships have led to groundbreaking inventions and patents, demonstrating the power of teamwork in fostering innovation.

Conclusion

Dong-seok Suh's contributions to the world of technology are invaluable. With a robust portfolio of patents and a commitment to innovation, he continues to inspire future generations of inventors and researchers. His work in non-volatile memory devices is a testament to the potential of human ingenuity in shaping a smarter and more efficient technological landscape.

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