The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2011
Filed:
Aug. 04, 2009
Applicants:
Dong-seok Suh, Seoul, KR;
Yoon-ho Khang, Yongin-si, KR;
Jin-seo Noh, Seoul, KR;
Vassili Leniachine, Suwon-si, KR;
Mi-jeong Song, Suwon-si, KR;
Inventors:
Dong-Seok Suh, Seoul, KR;
Yoon-Ho Khang, Yongin-si, KR;
Jin-Seo Noh, Seoul, KR;
Vassili Leniachine, Suwon-si, KR;
Mi-Jeong Song, Suwon-si, KR;
Assignee:
Samsung Electronics, Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a memory device, a transistor may be formed on a substrate, and a first electrode may be electrically connected thereto. A phase change material film may be vertically formed on the first electrode, and a second electrode may be formed on the phase change material film.