The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2012
Filed:
Sep. 11, 2009
Deok-kee Kim, Seoul, KR;
June-mo Koo, Seoul, KR;
Ju-chul Park, Suwon-si, KR;
Kyoung-won NA, Seoul, KR;
Dong-seok Suh, Seoul, KR;
Bum-seok Seo, Yongin-si, KR;
Yoon-dong Park, Yongin-si, KR;
Deok-kee Kim, Seoul, KR;
June-mo Koo, Seoul, KR;
Ju-chul Park, Suwon-si, KR;
Kyoung-won Na, Seoul, KR;
Dong-seok Suh, Seoul, KR;
Bum-seok Seo, Yongin-si, KR;
Yoon-dong Park, Yongin-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
Provided is a non-volatile memory device including at least one horizontal electrode, at least one vertical electrode, at least one data storage layer and at least one reaction prevention layer. The least one vertical electrode crosses the at least one horizontal electrode. The at least one data storage layer is located in regions in which the at least one vertical electrode crosses the at least one horizontal electrode, and stores data by varying its electrical resistance. The at least one reaction prevention layer is located in the regions in which the at least one vertical electrode crosses the at least one horizontal electrode.