The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2009
Filed:
Aug. 24, 2006
Applicants:
Jin-seo Noh, Seoul, KR;
Ki-joon Kim, Yongin-si, KR;
Yoon-ho Khang, Yongin-si, KR;
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/02 (2006.01);
U.S. Cl.
CPC ...
Abstract
A phase change memory device includes a switch and a storage node connected to the switch. The storage node includes a first electrode, a phase change layer and a second electrode. The phase change layer is formed of an InSbTe compound doped with Ge. In a method of operating a phase change memory including a switch and a storage node, the switch is maintained in an on state, and a first current is applied to the storage node.