The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2010
Filed:
Jan. 11, 2006
Dong-seok Suh, Seoul, KR;
Yoon-ho Khang, Yongin-si, KR;
Sang-mock Lee, Yongin-si, KR;
Jin-seo Noh, Seoul, KR;
Dong-seok Suh, Seoul, KR;
Yoon-ho Khang, Yongin-si, KR;
Sang-mock Lee, Yongin-si, KR;
Jin-seo Noh, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Abstract
Provided is a method of operating a phase change random access memory comprising a switching device and a storage node comprising a phase change layer. The method includes applying a reset current passing through the phase change layer from a lower portion of the phase change layer toward an upper portion of the phase change layer and being smaller than 1.6 mA to the storage node to change a portion of the phase change layer into an amorphous state. The set voltage is in an opposite direction is exemplary embodiments, and a connector is of small cross-sectional area.