The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2010
Filed:
Feb. 23, 2006
Sang-mock Lee, Gyeonggi-do, KR;
Yoon-ho Khang, Gyeonggi-do, KR;
Jin-seo Noh, Seoul, KR;
Dong-seok Suh, Seoul, KR;
Sang-mock Lee, Gyeonggi-do, KR;
Yoon-ho Khang, Gyeonggi-do, KR;
Jin-seo Noh, Seoul, KR;
Dong-seok Suh, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A phase change random access memory (PRAM), and a method of operating the PRAM are provided. In the PRAM comprising a switching element and a storage node connected to the switching element, the storage node comprises a first electrode, a second electrode, a phase change layer between the first electrode and a second electrode, and a heat efficiency improving element formed between the first electrode and the phase change layer. The heat efficiency improving element may be one of a carbon nanotube (CNT) layer, a nanoparticle layer, and a nanodot layer, and the nanoparticle layer may be a fullerene layer.