Company Filing History:

11 out of 3,550

Cypress Semiconductor Corporation

patents

4 out of 13,726

Applied Materials, Inc.

patents

1 out of 1

Advanced Optical Solutions, Inc.

patent

4. 1 out of 76

Advanced Ion Beam Technology, Inc.

patents

Years Active: 1999-2007

Loading Chart...

17 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7183222 - Dual damascene structure and method of making (2007-02-27),

2. 6865065 - Semiconductor processing chamber substrate holder method and structure (2005-03-08),

3. 6803318 - Method of forming self aligned contacts (2004-10-12),

4. 6734108 - Semiconductor structure and method of making contacts in a semiconductor structure (2004-05-11),

5. 6693042 - Method for etching a dielectric layer formed upon a barrier layer (2004-02-17),

6. 6635566 - Method of making metallization and contact structures in an integrated circuit (2003-10-21),

7. 6579420 - Apparatus and method for uniformly depositing thin films over substrates (2003-06-17),

8. 6399512 - Method of making metallization and contact structures in an integrated circuit comprising an etch stop layer (2002-06-04),

9. 6375744 - Sequential in-situ heating and deposition of halogen-doped silicon oxide (2002-04-23),

10. 6373679 - ELECTROSTATIC OR MECHANICAL CHUCK ASSEMBLY CONFERRING IMPROVED TEMPERATURE UNIFORMITY ONTO WORKPIECES HELD THEREBY, WORKPIECE PROCESSING TECHNOLOGY AND/OR APPARATUS CONTAINING THE SAME, AND METHOD(S) FOR HOLDING AND/OR PROCESSING A WORKPIECE WITH THE SAME (2002-04-16),

11. 6372634 - Plasma etch chemistry and method of improving etch control (2002-04-16),

12. 6350665 - Semiconductor structure and method of making contacts and source and/or drain junctions in a semiconductor device (2002-02-26),

13. 6322716 - Method for conditioning a plasma etch chamber (2001-11-27),

14. 6228781 - Sequential in-situ heating and deposition of halogen-doped silicon oxide (2001-05-08),

15. 6136685 - High deposition rate recipe for low dielectric constant films (2000-10-24),

Title: The Innovative Contributions of Jianmin Qiao

Introduction

Jianmin Qiao is a prominent inventor based in Fremont, CA, known for his significant contributions to semiconductor technology. With a total of 17 patents to his name, he has made remarkable advancements in the field of interconnect structures and wafer processing methods.

Latest Patents

One of Jianmin Qiao's latest patents is titled "Dual damascene structure and method of making." This patent describes a dual damascene interconnect structure produced using etch chemistry based on CHF. It includes an etch stop layer of either undoped silicon oxide or doped silicon oxide, along with dielectric layers both above and below the etch stop layer. The configuration varies depending on the type of etch stop layer used. Another notable patent is the "Semiconductor processing chamber substrate holder method and structure." This invention outlines a method and system for processing wafers, where a chuck system applies a force that deforms a substrate, allowing it to be oriented at a predetermined angle with respect to an input source.

Career Highlights

Throughout his career, Jianmin Qiao has worked with leading companies in the semiconductor industry, including Cypress Semiconductor Corporation and Applied Materials, Inc. His expertise in semiconductor processing has positioned him as a key figure in the development of innovative technologies.

Collaborations

Jianmin Qiao has collaborated with several talented individuals in his field, including Laxman Murugesh and Turgut Sahin. These collaborations have contributed to the advancement of semiconductor technologies and have fostered a spirit of innovation.

Conclusion

Jianmin Qiao's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the industry. His work continues to influence advancements in the field, showcasing the importance of innovation in technology.

This text is generated by artificial intelligence and may not be accurate.

Please report any incorrect information to support@idiyas.com