The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2001
Filed:
Aug. 30, 1999
Jianmin Qiao, Fremont, CA (US);
Sanjay Thekdi, Santa Clara, CA (US);
Cypress Semiconductor Corp., San Jose, CA (US);
Abstract
A method for conditioning a plasma etch chamber is presented. A plasma etch chamber is provided, which preferably includes a chuck for supporting a topography. A conditioning process may be performed in the etch chamber. The conditioning process preferably includes positioning a cover topography on or above the chuck. A conditioning feed gas containing (hydro)halocarbons may be introduced into the chamber. A conditioning plasma may be generated from the conditioning feed gas for a conditioning time. Immediately after generating the conditioning plasma is complete, the overall thickness of the cover topography is preferably at least as great as immediately before generating the conditioning plasma. By performing a conditioning process in such a manner, the total cost and complexity of the conditioning process may be reduced.