The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2002
Filed:
Apr. 28, 2000
Applicant:
Inventors:
Bo Jin, Campbell, CA (US);
Jianmin Qiao, Fremont, CA (US);
Assignee:
Cypress Semiconductor Corporation, San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/13205 ; H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/13205 ; H01L 2/14763 ;
Abstract
According to one embodiment ( ), a method of manufacturing a semiconductor device may include forming diffusion regions in a substrate with a gate, first spacer, and second spacer as a diffusion mask ( ). A second spacer may then be removed ( ) prior to the formation of an interlayer dielectric. An interlayer dielectric may then be formed ( ) over a gate structure and first spacer. A contact hole may then be etched through the interlayer dielectric that is self-aligned with the gate ( ).