The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2007
Filed:
Jan. 28, 2004
Applicant:
Jianmin Qiao, Fremont, CA (US);
Inventor:
Jianmin Qiao, Fremont, CA (US);
Assignee:
Cypress Semiconductor Corporation, San Jose, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A dual damascene interconnect structure, produced using etch chemistry based on CHF, includes (i) an etch stop layer of either undoped silicon oxide or doped silicon oxide, and (ii) dielectric layers both above and below the etch stop layer of the other (i.e., when the etch stop layer comprises undoped silicon oxide, the dielectric layers above and below the etch stop layer independently comprise a doped silicon oxide; and when the etch stop layer comprises doped silicon oxide, the dielectric layers above and below the etch stop layer independently comprise an undoped silicon oxide).