Yongin, South Korea

Ji-Sim Jung

This inventor holds 15 USPTO granted patents and 2 EPO patents. Top assignees: Samsung Electronics Co., Ltd., Seoul National University. Active years: 2010-2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ji-Sim Jung. Retrieved from https://idiyas.com/inventor/ji-sim-jung-g7ijd4er

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 66.7

 

Average Co-Inventor Count = 5.0

ph-index = 4

Forward Citations = 100(Granted Patents)


Company Filing History:


Years Active: 2010-2013

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15 patents (USPTO):Explore Patents

Title: The Innovations of Ji-Sim Jung

Introduction

Ji-Sim Jung is a prominent inventor based in Yongin-si, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 15 patents. His work focuses on the development of oxide semiconductor transistors and thin film transistors, which are crucial for modern electronic devices.

Latest Patents

One of Ji-Sim Jung's latest patents is for an oxide semiconductor transistor and a method of manufacturing the same. This invention involves an oxide semiconductor thin film transistor (TFT) that includes a first gate insulating layer arranged between an oxide semiconductor channel layer and a first gate, as well as a second gate insulating layer arranged between the channel layer and a second gate. The first and second gate insulating layers are made from different materials and have varying thicknesses. Notably, the second gate insulating layer is silicon oxide and is thinner than the first gate insulating layer, which is silicon nitride. The oxide semiconductor refers to materials such as Zinc Oxide, Tin Oxide, Ga-In-Zn Oxide, In-Zn Oxide, and In-Sn Oxide.

Another significant patent involves a thin film transistor formed on a flexible substrate and a method of manufacturing the same. This TFT includes a poly silicon layer formed on a flexible substrate, which contains a source region, a drain region, and a channel region. A gate stack is formed on the channel region of the poly silicon layer, consisting of first and second gate stacks, with a region of the poly silicon layer between them serving as an off-set region.

Career Highlights

Ji-Sim Jung has worked with notable organizations, including Samsung Electronics Co., Ltd. and Seoul National University. His experience in these prestigious institutions has allowed him to advance his research and development in semiconductor technologies.

Collaborations

Some of his notable coworkers include Kyung-Bae Park and Jang-Yeon Kwon. Their collaborative efforts have contributed to the advancements in the field of semiconductor technology.

Conclusion

Ji-Sim Jung's innovative work in oxide semiconductor transistors and thin film transistors has made a significant impact on the electronics industry. His numerous patents reflect his dedication to advancing technology and improving electronic device performance.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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