The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2013
Filed:
Feb. 02, 2009
Kyoung-seok Son, Yongin-si, KR;
Tae-sang Kim, Yongin-si, KR;
Jang-yeon Kwon, Yongin-si, KR;
Ji-sim Jung, Yongin-si, KR;
Sang-yoon Lee, Yongin-si, KR;
Myung-kwan Ryu, Yongin-si, KR;
Kyung-bae Park, Yongin-si, KR;
Byung-wook Yoo, Yongin-si, KR;
Kyoung-Seok Son, Yongin-si, KR;
Tae-Sang Kim, Yongin-si, KR;
Jang-Yeon Kwon, Yongin-si, KR;
Ji-Sim Jung, Yongin-si, KR;
Sang-Yoon Lee, Yongin-si, KR;
Myung-Kwan Ryu, Yongin-si, KR;
Kyung-Bae Park, Yongin-si, KR;
Byung-Wook Yoo, Yongin-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
An oxide semiconductor thin film transistor (TFT) and a method of manufacturing the oxide semiconductor TFT. The oxide semiconductor TFT includes a first gate insulating layer arranged between an oxide semiconductor channel layer and a first gate and a second gate insulating layer arranged between the channel layer and a second gate. The first and second gate insulating layers are made out of different materials and have different thicknesses. Preferably, the second gate insulating layer is silicon oxide and is thinner than the first gate insulating layer which is preferably silicon nitride. Oxide semiconductor refers to an oxide material such as Zinc Oxide, Tin Oxide, Ga—In—Zn Oxide, In—Zn Oxide, In—Sn Oxide, and one of Zinc Oxide, Tin Oxide, Ga—In—Zn Oxide, In—Zn Oxide and In—Sn Oxide.