The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2012
Filed:
Feb. 15, 2008
Ji-sim Jung, Yongin-si, KR;
Myung-kwan Ryu, Yongin-si, KR;
Jang-yeon Kwon, Yongin-si, KR;
Kyung-bae Park, Yongin-si, KR;
Min-koo Han, Seoul, KR;
Sang-yoon Lee, Yongin-si, KR;
Joong-hyun Park, Seoul, KR;
Sang-myeon Han, Seoul, KR;
Sun-jae Kim, Seoul, KR;
Ji-sim Jung, Yongin-si, KR;
Myung-kwan Ryu, Yongin-si, KR;
Jang-yeon Kwon, Yongin-si, KR;
Kyung-bae Park, Yongin-si, KR;
Min-koo Han, Seoul, KR;
Sang-yoon Lee, Yongin-si, KR;
Joong-hyun Park, Seoul, KR;
Sang-myeon Han, Seoul, KR;
Sun-jae Kim, Seoul, KR;
Abstract
Provided are a thin film transistor and a method of manufacturing the same. The thin film transistor includes: a lower structure; a semiconductor layer formed on the lower structure and including a plurality of doping regions; a first insulating layer and a second insulating layer formed on the semiconductor layer and separated from each other; a third insulating layer formed on the first insulating layer and the second insulating layer; and a gate electrode layer formed between regions of the third insulating layer respectively corresponding to the first insulating layer and the second insulating layer.