The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2010
Filed:
Dec. 18, 2007
Ji-sim Jung, Yongin-si, KR;
Jung-seok Hahn, Yongin-si, KR;
Sang-yoon Lee, Yongin-si, KR;
Jong-man Kim, Yongin-si, KR;
Jang-yeon Kwon, Yongin-si, KR;
Kyung-bae Park, Yongin-si, KR;
Ji-sim Jung, Yongin-si, KR;
Jung-seok Hahn, Yongin-si, KR;
Sang-yoon Lee, Yongin-si, KR;
Jong-man Kim, Yongin-si, KR;
Jang-yeon Kwon, Yongin-si, KR;
Kyung-bae Park, Yongin-si, KR;
Abstract
Provided is a method of manufacturing a driving-device for a unit pixel of an organic light emitting display having an improved manufacturing process in which the driving device can be manufactured with a smaller number of processes and in simpler processes. The method includes: forming an amorphous silicon layer including a first amorphous region and a second amorphous region disposed on the same plane of a substrate; forming an SAM (self-assembled monolayer) having a hydrophobic property on the first amorphous region; coating an aqueous solution in which nickel particles are dispersed, on the second amorphous region and the SAM, wherein a larger amount of nickel particles than on the SAM are dispersed on the second amorphous region using a hydrophilicity difference between the second amorphous region and the SAM; vaporizing the SAM through an annealing process and simultaneously performing metal induced crystallization in which the nanoparticles are used as a medium, to crystallize the first and second amorphous regions and to form first and second crystallization regions; patterning the first and second crystallization regions to form first and second channel regions; and forming first and second electrodes on the first and second channel regions.