The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 06, 2013

Filed:

Oct. 06, 2011
Applicants:

Jang-yeon Kwon, Yongin-si, KR;

Sang-yoon Lee, Yongin-si, KR;

Jong-man Kim, Yongin-si, KR;

Kyung-bae Park, Yongin-si, KR;

Ji-sim Jung, Yongin-si, KR;

Inventors:

Jang-yeon Kwon, Yongin-si, KR;

Sang-yoon Lee, Yongin-si, KR;

Jong-man Kim, Yongin-si, KR;

Kyung-bae Park, Yongin-si, KR;

Ji-sim Jung, Yongin-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
Abstract

A thin film transistor ('TFT') includes a poly silicon layer formed on a flexible substrate and including a source region, a drain region, and a channel region, and a gate stack formed on the channel region of the poly silicon layer, wherein the gate stack includes first and second gate stacks, and a region of the poly silicon layer between the first and second gate stacks is an off-set region. A method of manufacturing the TFT is also provided.


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