The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2010
Filed:
Mar. 28, 2007
Kyung-bae Park, Yongin-si, KR;
Jong-man Kim, Yongin-si, KR;
Jang-yeon Kwon, Yongin-si, KR;
Ji-sim Jung, Yongin-si, KR;
Kyung-bae Park, Yongin-si, KR;
Jong-man Kim, Yongin-si, KR;
Jang-yeon Kwon, Yongin-si, KR;
Ji-sim Jung, Yongin-si, KR;
Abstract
A method of degassing a thin layer and a method of manufacturing a silicon thin film includes applying microwaves to a silicon thin film deposited on a substrate to induce a resonance of impurities of H, Ar, He, Xe, O, and the like present in the silicon thin film so as to remove the impurities from the silicon thin film. A wavelength of the microwaves is equal to a natural frequency of an element of an object to be removed. According to a resonance of impurities induced by microwaves, the impurities can be very effectively removed from the silicon thin film so as to obtain a high quality silicon thin film. In particular, the microwaves are very suitable to be used in the manufacture of silicon thin films at low temperature.